Transistor-diode elements on basis of multiphase oxide materials with metal-insulator transition
Function, field of application
Use of developed elements in bipolar and field transistor diode elements, which realize «metal-insulator transition» effect for electronics.
Electronic component base for new electronic devices of information technologies and telecommunication.
Solid state information tank with high capacity, analog flash drive storage device; diode and transistor structures, analog diode and transistor structures on basis of amorphous silicon and polysilicon.
Description of the project
Variants of workable transistor-diode structures:
- structure of charge-injection transistor with swing check valve. The channel is controlled due to soft disruption of thin layer of dielectric and avalanche injection of drivers to the channel;
- structure of charge-injection transistor with p – n interface. The channel is controlled due to injection of drivers to the channel through p – n interface, it decreases turn-on voltage of device;
- heterostructure p-Si-VO2-Me and its I–V curve. Measuring was carried out by sinusoidal signal with frequency 100 Hz with limiting resistor in circuit- 10 kiloohm. In I-V curve we can see effect of rectification, which is caused by formation of p-n interface in the boundary p-Si – n-VO2.
Scheme of commercialization
- Transfer of technology, sale of a licence.
- For electronic devices of small integration, which use workable electronic components, after search of marketing «niches», creation of manufacture.
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- Patent RF for the invention №2468471 «Method of getting nonvolatile memory element » dated 27.11.2012.
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